Electron and hole transport layers (ETL and HTL) play an essential role in shaping the photovoltaic performance of perovskite solar cells. While compact metal oxide ETL have been largely explored in planar n-i-p device architectures, aligned nanowires or nanorods remain highly relevant for efficient charge extraction and directional transport. In this study, we have systematically grown ZnO nanowires (ZnO NWs) over aluminum-doped zinc oxide (AZO) substrates using a low-temperature method, hydrothermal growth (HTG). The main growth parameters were varied, such as hydrothermal precursors concentrations (zinc nitrate hexahydrate, hexamethylenetetramine, polyethylenimine) and growing time, in order to finely control NW properties (length, diameter, density, and void fraction). The results show that ZnO NWs grown on AZO substrates offer highly dense, well-aligned nanowires of high crystallinity compared to conventional substrates such as FTO, while demonstrating efficient FACsPb(IBr)3 perovskite device performance, without the requirement of conventional compact hole blocking layers. The device performances are discussed based on NW properties, including void fraction and aspect ratio (NW length over diameter). Finally, AZO/ZnO NW-based devices were fabricated with a recent HTL material based on a carbazole moiety (Cz–Pyr) and compared to the spiro-OMeTAD reference. Our study shows that the Cz–Pyr-based device provides similar performance to that of spiro-OMeTAD while demonstrating a promising stability in ambient conditions and under continuous illumination, as revealed by a preliminary aging test.